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| MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 3 1 2 1 BASE 2 SOT-523(SC-75) EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) Collector-Base Breakdown Voltage (IC= 10 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) Collector Cutoff Current (VCB= 70 Vdc, IE=0) Emitter Cutoff Current (VEB= 3 Vdc, IC=0) 1.FR-5=1.0 x 0.75 x 0.062 in _ 2. Pulse Test:Pulse Width=300 us, Duty Cycle < 2.0% V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 75 6.0 0.1 0.1 Vdc Vdc Vdc nAdc nAdc WEITRON http://www.weitron.com.tw MMBT2222AT ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = 0.1 mAdc, VCE= 10 Vdc) (I C = 1.0 mAdc, VCE= 10 Vdc) (IC = 10 mAdc, V CE = 10 Vdc) (IC = 150 mAdc, V CE= 10 Vdc) (IC = 500 mAdc, VCE= 10 Vdc) Collector-Emitter Saturation Voltage (3) (IC = 150 mAdc, I B = 15mAdc) (IC = 500 mAdc, IB = 50mAdc) Base-Emitter Saturation Voltage (3) (IC = 150 mAdc, I B= 15mAdc) (I C= 500 mAdc, I B= 50mAdc) VCE(sat) hFE 35 50 75 100 40 - - 0.3 1 1.2 2 Vdc VBE(sat) - - Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1) (IC = 20 mAdc, VCE=20 Vdc, f=100 MHz) Output Capacitance (VCB= 10 Vdc, I E =0, f=1.0 MHz) fT Cob 300 - MHz pF - 8 ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, I C= 150 mAdc, IB1= 15 mAdc) td tr ts tf - 10 25 ns 225 60 (VCC = 30 Vdc, IC = 150 mAdc, IB1=IB2= 15 mAdc) WEITRON http://www.weitron.com.tw MMBT2222AT 250 DC CURRENT GAIN : h FE 1000 (see Note 1) Pd ,POWER DISSIPATION(mW) 200 Ta =125 C 100 Ta =-25 C Ta =25 C 150 100 10 50 VCE =1.0V 0 0 100 Ta ,AMBIENT TEMPERATURE( C) 200 1 0.1 1 10 100 1000 IC ,COLLECTOR CURRENT(mA) FIG.1 Power Derating Curve 30 20 Cibo CAPACITANCE( p F) VCE ,COLLECTOR-EMITTER VOLTAGE (VOLTS) FIG.2 Typical DC Current Gain vs Collector Current 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1C =30mA 1C =1mA 1C =10mA 1C =100mA 1C =300mA 10 5.0 Cobo 1.0 0.1 1.0 10 50 0.01 0.1 1 10 100 REVERSE VOLTS(V) IB ,BASE CURRENT(mA) FIG.3 Typical Capacitance VBE(ON) ,BASE EMITTER VOLTAGE (VOLTS) FIG.4 Typical Collector Saturation Region 0.5 IC /IB =10 VCE(sat),COLLECTOR TO EMITTER SATURATION VOLTAGE(VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 VCE =5V Ta =50 C Ta =50 C 0.4 Ta =25 C 0.3 Ta =150 C 0.2 0.1 Ta =-50 C 0 1 10 100 IC ,COLLECTOR CURRENT(mA) 1000 Ta =150 C IC ,COLLECTOR CURRENT(mA) FIG.5 Collector Emitter Saturation Voltage vs. Collector Current FIG.6 Base Emitter Voltage vs. Collector Current WEITRON http://www.weitron.com.tw MMBT2222AT 1000 VCE =5V f T ,GAIN BAND WIDTH PRODUCT(MHz) 100 10 1 1 10 Ia ,COLLECTOR CURRENT(mA) 100 FIG.7 Gain Bandwidth Product vs. Collector Current WEITRON http://www.weitron.com.tw MMBT2222AT SOT-523 Outline Dimensions (SC-75) Unit:mm A SC-75 B T OP V IE W C D E G H K J L M Dim A B C D E G H J K L M Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 WEITRON http://www.weitron.com.tw |
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